Abstract��The synchrotron radiation grazing incident X-ray diffraction(GIXRD) method was employed to investigate the microstructure of the surface layer of TiN films, which had been deposited on the cemented carbide (WC-Co) and high speed steel (Fe-Cr), respectively, by Magnetron Filtration Arc Ion Plating, and then been implanted with V+ or Nb+ ions by MEVVA at different doses. The results showed that the original TiN film without being implanted with V+ or Nb+ ions both had a preferred orientation of specific direction depending on the substrate, while the grain size of TiN film implanted at smaller dosage (1��10��17ions/cm2) had been fined and the preferred orientation had been weakened or changed. An 50��100nm (given by TEM) amorphous layer occurs in the implantation zone near the surface of TiN film, when the dosage of ion implantation reached 5��10��17ions/cm2. The mechanism of ion implantation��s affection on TiN film was briefly discussed thereafter.
������ ��ұ ���ǽ� ����ʤ. TiN��Ĥ��������ע����۽ṹ�ķ����о�[J]. �й������ڿ���, 2011, 29(1): 13-13.
GUO De-Liang Ye TAO HU Zhi-Jie LIANG Wang-Sheng. Study on the Microstructure of the Implanted TiN Films. Chinese Journal of Iron and Steel, 2011, 29(1): 13-13.