Abstract��The influence of Cu��In precursors with Cu7In3 phase structure on the micro��structure of CuInS2 films was investigated.Cu��In precursors were synthesized via electrodepositing techniques. Cu7In3 films were prepared via annealing as��deposited Cu��In films in vacuum at 380��. CuInS2 films were prepared by sulphurization of two types of Cu��In precursors. The results showed that there was a CuxS secondary phase segregated on surface of the as��grown films. The CIS films with (112) preferred orientation were synthesized from Cu��In precursors containing the Cu7In3 phase. The Cu��In precursor with Cu7In3 phase is favorable for CuInS2 absorbers in solar cells.
���л�;��ӭ��;����;�Ժ���;�����;¬־��;������. Cu7In3ǰ��Ĥ�Ʊ�(112)����ȡ��CuInS2��Ĥ[J]. �й������ڿ���, 2008, 26(2): 1-0.
YAN You��hua;LIU Ying��chun;FANG Ling;ZHAO Hai��hua;LI De��ren;LU Zhi��chao;ZHOU Shao��xiong. Highly (112) ��oriented CuInS2 Films Prepared from Cu7In3 Precursor. Chinese Journal of Iron and Steel, 2008, 26(2): 1-0.
2008, Vol. 26 
