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STUDY ON THE MICROSTRUCTURE OF CuInS2 THIN FILMS |
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Abstract Electrodepositing Cu-In precursors were used as the backing materials, and sulfurpowder was employed as the raw materials. The innovative sulfur method of Cu-In precursor at certain speed movement was attempted. SEM and EDS were used to observe the surface morphologies and to determine the atomic concentrations .Their micro-structures were characterized by XRD. The kinetics of the reactions in the film were also analyzed.The results show Cu-In precursor is composed of CuIn and CuIn2 phases, the CuxS phase occures in addition to the CuInS2 phase in CIS films formed using CuIn and CuIn2 phases. The CuInS2 films etched KCN have chalcopytite structure, is good adhesive to substrate.When Cu-In precursor speed is 1.0cm/s, the crystalline quality of CuInS2 film is significantly improved, the film is even, compact, the grain size maintains at 1��m, compenent is close to stoichiometry, along (112) orientation growth, it is suitable for absorber of CIS solar cell.
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Received: 30 October 2009
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