同步辐射掠入射X射线衍射法

研究TiAlN薄膜离子注入层的微观结构梁旺胜,陶冶,刘红亮

物理测试 ›› 2011, Vol. 29 ›› Issue (2) : 5-9.

物理测试 ›› 2011, Vol. 29 ›› Issue (2) : 5-9.
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同步辐射掠入射X射线衍射法

  • 研究TiAlN薄膜离子注入层的微观结构梁旺胜,陶冶,刘红亮
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Study on Implanted TiAlN Films by Synchrotron Radiation Grazing Incident XRay Diffraction

  • 研究TiAlN薄膜离子注入层的微观结构梁旺胜,陶冶,刘红亮
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摘要

利用磁过滤阴极电弧镀在硬质合金上沉积厚度约2~3 μm的TiAlN薄膜,并用MEVVA源离子对TiAlN薄膜注入金属离子V+和Nb+。应用北京同步辐射装置(BSRF)的同步辐射光源,采用掠入射X射线衍射(GIXRD)的方法对TiAlN薄膜表面离子注入层的微观结构进行分析研究。结果表明:未经过离子注入的TiAlN薄膜主要组成相是没有择优取向的Ti3AlN伴有少量AlN,而较小剂量(1×1017 ions/cm2)的离子注入都可以使Ti3AlN产生(111)上的择优取向和细化晶粒,且AlN消失;当离子注入的剂量达到5×1017 ions/cm2时,注入V+的Ti3AlN择优取向变为(210),并产生TiN相;注入Nb+ 的各个衍射峰完全消失,说明TiAlN薄膜表面离子注入层被非晶化,结合透射电镜的研究结果,观察到非晶层的厚度约为80~100 nm。

Abstract

The synchrotron radiation grazing incident Xray diffraction (GIXRD) method was applied to analyze the microstructure of the TiAlN films, which was implanted with V+ and Nb+ by MEVVA at different dosages after deposited on the cemented carbide (WCCo) by Magnetic Filter Arc Ion Plantation into 2~3 μm. The result shows that: the principal phase in the TiAlN film without implantation is the unpreferred orientation Ti3AlN with a small amount of AlN. Nevertheless, when implanted with minor dosage (1×1017 ions/cm2), the grain would be refined and preferred orientation in crystal face(111) arises, while AlN disappears,when the dosage reaches 5×1017 ions/cm2 ,the preferred orientation turns into (210) implanted with V+ ,and a considerable amount of TiN emerges with Nb+ , all the peaks completely vanish,combining with the TEM result , it is observed that the thickness of amorphous is about 80~100 nm .

关键词

同步辐射 / 掠入射 / X射线衍射 / 离子注入 / TiAlN薄膜

Key words

synchrotron radiation / grazing incidence / X-ray diffraction / ion implantation / TiAlN films

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导出引用
梁旺胜, 陶冶, 刘红亮. 同步辐射掠入射X射线衍射法[J]. 物理测试, 2011, 29(2): 5-9
LIANG Wang-Qing, DAO Ye, LIU Hong-Liang. Study on Implanted TiAlN Films by Synchrotron Radiation Grazing Incident XRay Diffraction[J]. Physics Examination and Testing, 2011, 29(2): 5-9

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