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二维自旋电子学的研究进展

Research progress in 2D spintronics

  • 摘要: 二维自旋电子学器件因其表面无悬挂键的特性,可堆叠或生长形成具有超高质量界面与高自旋注入效率的范德华异质结,有望突破传统自旋电子学器件中晶格匹配与兼容性的限制,进而实现自旋电子学的重大物理和技术突破。系统归纳了制备二维材料的多种方法,并以二维铁磁材料Fe3GeTe2、Fe3GaTe2和二维拓扑半金属WTe2等为例,重点阐述了二维铁磁异质结的最新研究动态。最后,对二维自旋电子学器件的发展进行了总结与展望。

     

    Abstract: Two-dimensional(2D) spintronic devices,benefiting from their dangling-bond-free surfaces,can be stacked or grown into van der Waals heterostructures with ultrahigh-quality interfaces and high spin injection efficiency. This capability offers a promising approach to overcome the limitations of lattice matching and compatibility in conventional spintronics,thereby paving the way for significant physical and technological breakthroughs. This review systematically introduces various methods for preparing 2D materials and highlights recent advances in 2D ferromagnetic heterostructures,focusing on representative materials such as Fe3Ge Te2、Fe3Ga Te2 and WTe2. Finally,a concluding outlook on the future development of2D spintronic devices are provided.

     

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