Abstract: A van der Waals heterojunction was fabricated by stacking mechanically exfoliated thin-layer HfS₂ and MoS₂ using a thermal transfer technique,and subsequently converted into an HfO_x/MoS₂ heterostructure through room-temperature UV-ozone treatment. The composition and morphology of the HfO_x/MoS₂ heterostructure memristor were characterized using optical microscopy,scanning electron microscopy,atomic force microscopy,and Raman spectroscopy,while its electrical properties were evaluated using a semiconductor parameter analyzer. The results indicate that with increasing oxidation time,the current on/off ratio of the vertically structured HfO_x/MoS₂ heterojunction memristor progressively increases,reaching a maximum value of 3.2×10～9. The off-state current is as low as 3.24×10^-14A,the retention time exceeds 10～4s,and the resistive switching behavior remains stable after 100 cycles.